ST13007FP high voltage fast-switching npn power transistor n high voltage capability n npn transistor n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed n fully characterized at 125 o c n large rbsoa applications n electronic ballasts for fluorescent lighting n switch mode power supplies description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. they use a cellular emitter structure to enhance switching speeds. internal schematic diagram june 1998 absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 8 a i cm collector peak current 16 a i b base current 4 a i bm base peak current 8 a p tot total dissipation at t c 25 o c36w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220fp ? 1/6
thermal data r thj-case thermal resistance junction-case max 3.47 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = rated v cev v ce = rated v cev t c = 100 o c 1 5 ma ma i ebo emitter cut-off current (i c = 0) v eb = 9 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 8 a i b = 2 a i c = 5 a i b = 1 a t c = 100 o c 1 2 3 3 v v v v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 5 a i b = 1 a t c = 100 o c 1.2 1.6 1.5 v v v h fe * dc current gain i c = 2 a v ce = 5 v group a group b i c = 5 a v ce = 5 v 15 26 5 28 40 30 t s t f inductive load storage time fall time i c = 5 a v cl = 250 v i b1 = 1 a i b2 = -2 a l = 200 m h 1.6 60 2.5 110 ms ns t s tf inductive load storage time fall time i c = 5 a v cl = 250 v i b1 = 1 a i b2 = -2 a l = 200 m h t c = 125 o c 2.3 110 m s ns * pulsed: pulse duration = 300 m s, duty cycle 2 % note : product is pre-selected in dc current gain ( group a and gr oup b). stmicroelectronics reserves the right to ship eit her groups according to production availability. please contact your nearest stmicroelectronics sales office for delivery details. ST13007FP 2/6
safe operating areas dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage ST13007FP 3/6
inductive fall time inductive storage time reverse biased soa ST13007FP 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data ST13007FP 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rig hts of stmicroelectroni cs. spe cification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. st microelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of s tmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . ST13007FP 6/6
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